Effect of Annealing On Some structure Properties and Hall effect of (ZnS0.1Se0.9) Films.
journal of kerbala university,
2009, Volume 5, Issue 1, Pages 89-97
AbstractThe effect of annealing (Ta=300,373,423) K on some structural properties and hall effect has been studied (concentration (nH), Hall mobility (µH),and drift velocity (vd)) had been measured for ZnS0.1Se0.9 films with different thickness (t=0.3,0.5, and 0.7 µm) which were prepared at room temperature using thermal evaporation under vacuum . We notice from this study that the films at all thicknesses and tempertures have a negative Hall coefficient (n–type charge carriers).
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