ISSN: 1813-0410

Keywords : PLD

Study the Effect of Copper (Cu) Doping on the Structure Properties of Zinc Oxide (ZnO) Prepared by Using Pulsed Laser Deposition (PLD)

Ghaleb Ali Al-Dahash; Qussay Mohammed Salman; Majid F. Haddawi

journal of kerbala university, 2017, Volume 13, Issue 2, Pages 87-95

In this research the structural properties for pure zinc oxide (ZnO) thin films and ZnO doped with (6 and 9) % weight percentage of copper have been investigated. The thin films have prepared by using pulsed laser deposition (PLD) technique, they synthesized by using the following parameters; Nd:YAG laser (λ=1064 nm), repetition rate of (6 Hz), pulse duration of (10 ns), energy (100 mJ) and vacuum pressure (10-5 mbar). The thin films have deposited on glass substrate at (2500C). The XRD shown the films were polycrystalline in hexagonal phase with peaks belong to cubic phase. The calculations from XRD data shown the crystallite size decreasing from (46.98-56.57) nm for pure zinc oxide to (34.70 and 44.49 nm) for copper doped ZnO with (6 and 9) % respectively, other structure parameters (bond length, dislocation density, lattice constants, strain) have been calculated. Investigated by AFM and SEM confirm that thin films have high homogeneity and the grains have rod-like structure. The EDX diagram didn’t show any other phase which indicate that the doping substitution type because closeness between Zn and Cu atoms.

Investigation of structural, optical and electrical properties of TiO2 and ZnO thin films

Samer. Y. Al-Dabag; Ghuson. H. Mohammed; Sudad. S. Ahmed

journal of kerbala university, 2012, Volume 8, Issue 3, Pages 7-16

This paper reports the investigation of structural, optical and electrical properties of TiO2 and ZnO thin films. The thin films were prepared by pulsed laser deposition (PLD) method using pulsed Nd:YAG laser at 1064nm wavelength and repetition rate 6Hz. Different pulse of shot (200, 500, 800) and different thickness of TiO2 (150, 250, 400)nm, ZnO (250, 400, 550)nm. were used at constant energy (800 m J).
Morphology of the deposits materials were studied by Atomic Force Microscopy (AFM), results indicated that all thin films have nanoscale grain size around 90 nm.
The linear optical measurements showed that nanostructure (TiO2 and ZnO) thin films have direct energy gap.
The Hall effect measurements confirmed that the nanostructure (TiO2 and ZnO) thin films are n-type and the charge carriers concentration (n) were increased with increasing pulse shot. Hall mobility (H) decreases with the increasing of pulse shot thin films.