Keywords : ZnO
journal of kerbala university,
Volume 8, Issue 3, Pages 7-16
This paper reports the investigation of structural, optical and electrical properties of TiO2 and ZnO thin films. The thin films were prepared by pulsed laser deposition (PLD) method using pulsed Nd:YAG laser at 1064nm wavelength and repetition rate 6Hz. Different pulse of shot (200, 500, 800) and different thickness of TiO2 (150, 250, 400)nm, ZnO (250, 400, 550)nm. were used at constant energy (800 m J).
Morphology of the deposits materials were studied by Atomic Force Microscopy (AFM), results indicated that all thin films have nanoscale grain size around 90 nm.
The linear optical measurements showed that nanostructure (TiO2 and ZnO) thin films have direct energy gap.
The Hall effect measurements confirmed that the nanostructure (TiO2 and ZnO) thin films are n-type and the charge carriers concentration (n) were increased with increasing pulse shot. Hall mobility (H) decreases with the increasing of pulse shot thin films.