ISSN: 1813-0410

Keywords : YAG

The use of Nd:YAG laser in treatment of superficial vascular and pigmentary lesions

Ahmed. Jumah. Mhawes; Kadhum. Jawod. Shabaa; A.L. Hanaa. Hasan . K; A.L. Jammel. Mohammed. A Mona

journal of kerbala university, Volume 13, Issue 3, Pages 174-187

In this work, Nd:YAG laser with two wavelength (1064,532)nm was used in treating vascular (port wine stain, heamangioma ;and Telangiectase). Also Nd:YAG laser was used in tattoo treatment and the results achived is best than by using (KTP,PDL and Ar) laser. This process is occurs via absorption laser beam by skin layers, especially surface skin layer which is useful in the cosmetics surgical. There are different properties related with skin layer such as thermal diffusion and thermal relaxation time, the later is higher than the time of laser puls and this cause cooling to one –half without according thermal diffusion in normal (healthy) skin region.
Nd:YAG laser can absorbed deeply and this observed when it used to remove the deep pigmentation, in compare with other laser types which absorbed only by the surface of skin layer because of low power , wavelength , frequencies and intensity in compare with Nd:YAG laser.

Investigation of structural, optical and electrical properties of TiO2 and ZnO thin films

Samer. Y. Al-Dabag; Ghuson. H. Mohammed; Sudad. S. Ahmed

journal of kerbala university, Volume 8, Issue 3, Pages 7-16

This paper reports the investigation of structural, optical and electrical properties of TiO2 and ZnO thin films. The thin films were prepared by pulsed laser deposition (PLD) method using pulsed Nd:YAG laser at 1064nm wavelength and repetition rate 6Hz. Different pulse of shot (200, 500, 800) and different thickness of TiO2 (150, 250, 400)nm, ZnO (250, 400, 550)nm. were used at constant energy (800 m J).
Morphology of the deposits materials were studied by Atomic Force Microscopy (AFM), results indicated that all thin films have nanoscale grain size around 90 nm.
The linear optical measurements showed that nanostructure (TiO2 and ZnO) thin films have direct energy gap.
The Hall effect measurements confirmed that the nanostructure (TiO2 and ZnO) thin films are n-type and the charge carriers concentration (n) were increased with increasing pulse shot. Hall mobility (H) decreases with the increasing of pulse shot thin films.